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| savantic semiconductor product specification silicon pnp power transistors 2N6296 2n6297 description with to-66 package darlington complement to type 2n6294/6295 applications for high gain amplifier and medium speed switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2N6296 -60 v cbo collector-base voltage 2n6297 open emitter -80 v 2N6296 -60 v ceo collector-emitter voltage 2n6298 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -8 a i b base current -80 ma p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.5 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N6296 2n6297 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6296 -60 v (br)ceo collector-emitter breakdown voltage 2n6297 i c =-50ma ; i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-2a ;i b =-8ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-4a ;i b =-40ma -3.0 v v besat base-emitter saturation voltage i c =-4a ;i b =-40ma -4.0 v v be base -emitter on voltage i c =-2a ; v ce =-3v -2.8 v i cex collector cut-off current v ce =ratedv ce ;v be(off) =1.5v t c =150 -0.5 -5.0 ma i ceo collector cut-off current v ce =1/2rated v ceo ; i b =0 -0.5 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-2a ; v ce =-3v 750 18000 h fe-2 dc current gain i c =-4a ; v ce =-3v 100 f t transition frequency i c =-1.5a ; v ce =-3v;f=1.0mhz 4.0 mhz c ob output capacitance i e =0 ; v cb =-10v;f=0.1mhz 200 pf savantic semiconductor product specification 3 silicon pnp power transistors 2N6296 2n6297 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2N6296 2n6297 |
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